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High resolution XRD study of silicon carbide CVD growth

AS BakinC HallinO KordinaE JanzenInternational Conference on Silicon Carbide Related Materials

Silicon carbide Schottky diodes and fabrication method

A semiconductor device and method of formation wherein a disjointed termination layer 102 is formed around a Schottky metal region 110. A SiC substrate

Fast chemical sensing with metal-insulator silicon carbide

IEEE Electron Device LettersTobias, P.Baranzahi, A.Spetz, A.L.Kordina, O.Janzen, E.Lundstrom, I

SYSTEM FOR GROWING SILICON CARBIDE CRYSTALS

Kordina, OlleMasi, MaurizioSpeciale, NataleCrippa, DaniloPretti, FrancoSee references of WO2004111316A1WO2004111316A1 † Jun 9, 2004 Dec 23, 2004 Lpe

The origin of cubic polytype inclusions in CVD-grown

AO KonstantinovC HallinB PetzO KordinaE JanzenInternational Symposium on Compound Semiconductors

Gas-Phase Modeling of Chlorine-Based Chemical Vapor

The Cl/Si ratio is demonstrated to be crucial not only for the preventionLeone, S., Kordina, O., Henry, A., Nishizawa, S., Danielsson, O

Optical properties and Zeeman spectroscopy of niobium in

Leone, StefanoKordina, OlofSon, Nguyen TIvády, ViktorGali, AdamAbrikosov, Igor AJanzén, ErikIvanov, Ivan G《Physical Review B》

Study of the hydrogen etching of silicon carbide substrates

from the publishers actual policy or licence agreement may be applicable. Kordina and E. Jangen, Study of the hydrogen etching of silicon carbide

Time-resolved decay of the blue emission in porous silicon

electrochemical method, the decay time is shown to be extremely fast (τ=Harris, C., Syv¨aj¨arvi, M., Bergman, J., Kordina, O., Henry,

Reduction of breakage losses in silicon-cell processing

From these elementary facts it can be concluded,be considered: The prevention of formation or Beinert, JKübler, RKordisch, HKönczöl,

kordina o 2000

O. KordinaC. HallinE. Janzé《Physical Review B》N. T. Son,P. N. Hal,,and E. Jazen.Carbon vacancy-related defect in 4H and 6H SiC. Physical

SYSTEM FOR GROWING SILICON CARBIDE CRYSTALS

Kordina, OlleMasi, MaurizioSpeciale, NataleCrippa, DaniloPretti, FrancoSee references of WO2004111316A1WO2004111316A1 † Jun 9, 2004 Dec 23, 2004 Lpe

Silicon carbide Schottky diodes and fabrication method

A semiconductor device and method of formation wherein a disjointed termination layer 102 is formed around a Schottky metal region 110. A SiC substrate

Optical properties and Zeeman spectroscopy of niobium in

Leone, StefanoKordina, OlofSon, Nguyen TIvády, ViktorGali, AdamAbrikosov, Igor AJanzén, ErikIvanov, Ivan G《Physical Review B》

VSi based vector-magnetometry in 4H-Silicon Carbide - status

Niethammer, MatthiasWidmann, MatthiasLee, SangYunStenberg, PontusKordina, OlleOhshima, TakeshiSon, NguyenJanzen, ErikWrachtrup, J

SILICON CARBIDE SCHOTTKY DIODES AND FABRICATION METHOD

SILICON CARBIDE SCHOTTKY DIODES AND FABRICATION METHODOlof Claes Erik KORDINA

Studies on fracture and strength of photovoltaic silicon

Structures II 1991, 993-994, 1991-08-01Kordisch, HSummaries of Technical Papers of Meeting Architectural Institute of Japan Structures II

Gas-Phase Modeling of Chlorine-Based Chemical Vapor

The Cl/Si ratio is demonstrated to be crucial not only for the preventionLeone, S., Kordina, O., Henry, A., Nishizawa, S., Danielsson, O

kordina o 2000

O. KordinaC. HallinE. Janzé《Physical Review B》N. T. Son,P. N. Hal,,and E. Jazen.Carbon vacancy-related defect in 4H and 6H SiC. Physical

[IEEE 2004 International Symposium on Electromagnetic

doi:10.1109/isemc.2004.1349886Jeffrey, I.LoVetri, J.Kordi, B

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