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The Impact of Trivedi Effect on Silicon Carbide | Pearltrees

Abstract Silicon carbide (SiC) is a well-known ceramic due to its excellent spectral absorbance and thermo-mechanical properties. The wide band gap, high

IDW40G65C5FKSA1 - INFINEON - Silicon Carbide Schottky Diode,

Buy IDW40G65C5FKSA1 - INFINEON - Silicon Carbide Schottky Diode, thinQ 5G 650V Series, Single, 650 V, 40 A, 55 nC, TO-247 at element14. order

US Patent Application for SILICON CARBIDE SEMICONDUCTOR

A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor

- Equipment for manufacturing silicon carbide single crystal

285255415 - EP 1464735 A2 2004-10-06 - Equipment for manufacturing silicon carbide single crystal - A method for manufacturing a silicon carbide single

US Patent for Method for manufacturing silicon carbide single

A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source

CERAQUITAINE Refractory Ceramics

CERAQUITAINE is a french producer of refractory ceramics : kiln furniture, batts, props, tubes, supports in cordierite, mullite, silicon carbide, and

a Semiconductor Device Having Graphene Material - Infineon

A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a

- STMicroelectronics

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

tuyere using the material eombined silicon carbide with

The physicochmical performance of the material combined silicon carbide with silicon nitride and research on the material used to make the compound tuyere

Silicon Carbide SiC - STMicroelectronics

Silicon Carbide (SiC) is a wide bandgap material. Wide bandgap technologies have many advantages compared to Silicon. Operating temperatures are higher, heat

US Patent Application for Stop-On Silicon Containing Layer

dielectric films including low-k material; and silicon nitride, silicon oxide, silicon carbide, such as those from the Zonyl® family (e.g

STPSC8H065DLF - 8 A 650 V SiC Power Schottky Diode - ST

A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material

Industrys First Surface Mount 1200V Silicon Carbide

Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, announces the availability of the industrys first commercial 1200V

- STMicroelectronics

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A

engine and machine pts. - based on silicon carbide and/

High temp-resistant sintered composite material useful for gas turbine, engine and machine pts. - based on silicon carbide and/or nitride and contains

US6764958B1 - Method of depositing dielectric films - Google

A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by

Silicon Carbide Foam | Products Suppliers | Engineering360

Find Silicon Carbide Foam related suppliers, manufacturers, products and specifications on GlobalSpec - a trusted source of Silicon Carbide Foam information

accelerano sulla tecnologia GaN-on-Silicon a supporto dell

A super heat-resistant silicon carbide fiber has an oxygen content of less than 1.0% by weight. In a process for producing the super heat-resistant

US6764958B1 - Method of depositing dielectric films - Google

A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by

US Patent for Silicon carbide substrate Patent (Patent # 10,

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

STMicroelectronics Extends Silicon-Carbide MOSFET Family -

2002515- The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics generation, high-efficiency drives, power supplies, and smart-gri

HongFeng Superabrasives,Blasting Media,bonded abrasives,

Precision Ball and Gauge are world renown manuacturers of high quality ball bearings and related products. Makers of Silicon Nitride. Tungsten Carbide

Silicon carbide material for nuclear applications,

A precursor formulation of a silicon carbide material that includes a ceramic material and a boron-11 compound. The ceramic material may include silicon

WO2004007401A1 - Silicon carbide matrix composite material,

Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon

Advanced Materials | II-VI Incorporated

These activities support the II-VI family of equipment and architectures to automate material a leading provider of silicon carbide substrates

Silicon Carbide Bar | Products Suppliers | Engineering360

Find Silicon Carbide Bar related suppliers, manufacturers, products and specifications on GlobalSpec - a trusted source of Silicon Carbide Bar information

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