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using SiC power semiconductors - 12 March 2014 - Infineon

Figure 3. SiC transistors (eg, SiC JFET from Infineon) in 3rd quadrant – channel mode possible to reduce losses by turning on the channel in free

Infineon begins volume production of first full-SiC-module,

Infineon begins volume production of first full-SiC-module, and adds to CoolSiC familyMay 17, 2017 · by semicond

Infineon Technologies | Discrete Semiconductor Products |

Order today, ships today. IDL06G65C5XUMA1 – Diode Silicon Carbide Schottky 650V 6A (DC) Surface Mount PG-VSON-4 from Infineon Technologies. Pricing

Infineon to Debut Automotive SiC Schottky Diode Products -

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Infineon GaN on SiC RF power transistors anticipate 5G |

201598-Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile

Cree, Wolfspeed, Infineon: SiC and GaN power and radio-

Close Search HOME NEWS MEMS SENSORS IMAGING PHOTONICS MEDTECH ADVANCED PACKAGING SOFTWARE COMPUTING MEMORY MANUFACTURING SO

Infineon | Rutronik Elektronische Bauelemente

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. About Infineon Technology Featured produc

Infineon()IDDD20G65C6XTMA1(SIC DIODES)_

Infineon’s first 1200 V CoolSiC MOSFET and a half, Infineon Technologies AG has now extended its SiC technology, called CoolSiC, to high-voltage

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A method of planarizing a roughened surface of a SiC substrate includes: forming a sacrificial material on the roughened surface of the SiC substrate,

Infineon: SiC modules and more - News

Subscribe More Titles ContactsAdd to my Reading List Remove from my Reading List News Article Infineon: SiC Modules And MoreMonday 5th June 2017

Infineon launches sixth generation of CoolSiC Schottky diodes

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Generation 1200V thinQ!™ SiC Schottky Diodes, Infineon

Introducing the 5th Generation 1200V thinQ!™ SiC Schottky Diodes, Infineon Enables Higher Efficiency and Reliability for Power Applications Quot

Infineon Releases Revolutionary CoolSiC™ 1200V SiC JFET

IFNNY) introduced the new CoolSiC™ 1200V SiC JFET family, which strengthens Infineon’s market leadership in the SiC (Silicon Carbide) product

Infineon to acquire Wolfspeed for $850 million | Chip Design

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Cree, Inc. (Nasdaq: CREE) announced today that it has entered into a definitive agreement to

CoolSiC™ Schottky Diode 1200V - Infineon Technologies

Products Applications Tools About Infineon Discoveries Careers Newsletter Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables

Reliability considerations for recent Infineon SiC diode

Microelectronics Reliability 47 (2007) Reliability considerations for recent Infineon SiC diode releases M. Holz a, *, G. Hultsch b, T. Scherg a, R

Products - Infineon Technologies

Toggle Navigation Login to myInfineon Register for myInfineon Home Products Power Power MOSFET IGBT Wide Bandgap Semiconductors (SiC/GaN) Smart Low-Side

Product Brief 1200V CoolSiC N SiC JFET - Infineon

Consult Infineon Technologies - Sensorss Product Brief 1200V CoolSiC N SiC JFET brochure on DirectIndustry. Page: 1/2 Product Brief 1200V CoolSiC

C161K, C161O - Infineon Technologies

Microcontroller (MCU) Legacy Products (C500-, C166-, XC166-, AUDO1-Family) C500 Family XC166 Family C166® Family

Infineon Releases Revolutionary CoolSiCTM 1200V SiC JFET

Today at the PCIM Europe 2012 trade show, Infineon Technologies (FSE: IFX / OTCQX: IFNNY) introduced the new CoolSiCTM 1200V SiC JFET

Infineon starts volume production of first full-SiC-module,

these are the main advantages of transistors based on silicon carbide (SiC) Already last year, Infineon announced the lead products EASY 1B (Half-

Infineon introduces new CoolSic Schottky diodes for on-board

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Infineons Incredible SiC Race - Infineon Technologies

As a pioneer in the commercial use of SiC technology, Infineon has always had a head start in the race for the best silicon carbide products on the

650V CoolSiC - -

Infineon Technologies offers a wide range of semiconductor solutions, microcontrollers, LED drivers, sensors and Automotive Power Management ICs. Produc

Infineon develops SiC diodes for high-frequency power

MUNICH -- Infineon Technologies AG here today announced it has become the first chip maker to produce power Schottky diodes on silicon-carbide (SiC)

1200V SiC MOSFET - /

Infineon to acquireWolfspeed Investor Presentation July 14, 2016 Table of Contents 1 Key facts 2 Copyright © Infineon Technologies AG 2016. All

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